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Indium(III) phosphide, polycrystalline lump, 99.99% (metals basis), Thermo Scientific Chemicals
Descrizione
InP is used in high-power and high-frequency electronics because of its superior electron velocity. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. It is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
This Thermo Scientific Chemicals brand product was originally part of the Alfa Aesar product portfolio. Some documentation and label information may refer to the legacy brand. The original Alfa Aesar product / item code or SKU reference has not changed as a part of the brand transition to Thermo Scientific Chemicals.
InP is used in high-power and high-frequency electronics because of its superior electron velocity. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. It is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
Solubility
Insoluble in water.
Notes
Store in a cool, dry conditions in a well sealed container. Incompatible with oxidizing agent.

Specifica
Specifica
Materiale o nome chimico | Indium(III) phosphide |
Punto di fusione | 1070°C |
Forma fisica | Polycrystalline Lump |
Quantità | 25 g |
Note percentuale saggio | (metals basis) |
Indice di Merck | 14,4953 |
Informazioni di solubilità | Insoluble in water. |
Peso formulazione | 145.79 |
Percent Purity | 99.99% |
Densità | 4.81 |
RUO – Research Use Only
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